A FeFET-Based Hybrid Memory Accessible by Content and by Address

Emerging nonvolatile memory technologies are attracting interest from the system design level to implement alternatives conventional von-Neumann computing architectures. In particular, hafnium oxide-based ferroelectric (FE) technology is fully CMOS-compatible and has already been used for logic-in-memory architectures or compact ternary content addressable (TCAM) cells. These enable tight combination of different functionalities in same circuit reduce implementation area energy consumption. this article, we propose a new hybrid that combines TCAM normal capability: Ternary Content MEMory (TC-MEM). A 1-bit TC-MEM proposed discussed detail, both as concept through its 28-nm field-effect transistor (FeFET) technology. Measurement results demonstrate functionality. We also discuss how scale it multibit circuits, well use allowing reversible functions using one table instead two tables, in-memory-computing concepts.